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| BS 107 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 S Type Pin 2 G Marking Pin 3 D VDS 200 V ID 0.13 A RDS(on) 26 Package BS 107 Type BS 107 TO-92 BS 107 Ordering Code Q67000-S078 Tape and Reel Information E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Drain-gate voltage RGS = 20 k VDS V DGR 200 V 200 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current TA = 31 C 20 Class 1 A 0.13 ID DC drain current, pulsed TA = 25 C IDpuls 0.52 Ptot Power dissipation TA = 25 C W 1 Data Sheet 1 05.99 BS 107 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA -55 ... + 150 -55 ... + 150 C 125 E 55 / 150 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 0.8 IDSS 1.5 2 Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 C VDS = 200 V, V GS = 0 V, Tj = 125 C VDS = 130 V, V GS = 0 V, Tj = 25 C VDS = 70 V, VGS = 0.2 V, Tj = 25 C IGSS 0.1 2 - 1 60 30 1 A nA A nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 1 10 Drain-Source on-state resistance VGS = 4.5 V, ID = 0.12 A VGS = 2.8 V, ID = 0.02 A 14 14.5 26 28 Data Sheet 2 05.99 BS 107 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS 2 * ID * RDS(on)max, ID = 0.12 A gfs S 0.06 0.17 pF 60 80 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 8 12 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 3.5 5 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 tr 5 8 Rise time VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 td(off) 8 12 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 tf 12 16 Fall time VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 - 15 20 Data Sheet 3 05.99 BS 107 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TA = 25 C IS A 0.13 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 0.52 V Inverse diode forward voltage VGS = 0 V, IF = 0.5 A - 0.9 1.2 Data Sheet 4 05.99 BS 107 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 4 V 0.14 A 0.12 1.2 W 1.0 Ptot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ID 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 0.02 0.01 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Data Sheet 5 05.99 BS 107 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.30 A 0.26 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 80 a b c Ptot = 1W k li j hg e f d VGS [V] a b c d e 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 RDS (on) 60 ID 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 2 4 6 8 a c 50 f g h i j k 40 30 bl 20 d e hf l j k ig 10 VGS [V] = a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0 0 V 11 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18 VDS ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 0.40 parameter: tp = 80 s, V DS2 x ID x RDS(on)max 0.30 S A ID gfs 0.26 0.24 0.22 0.20 0.30 0.25 0.18 0.16 0.14 0.20 0.15 0.12 0.10 0.10 0.08 0.06 0.05 0.00 0 1 2 3 4 5 6 7 8 V VGS 0.04 0.02 0.00 10 0.00 0.05 0.10 0.15 0.20 A ID 0.30 Data Sheet 6 05.99 BS 107 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.12 A, VGS = 4.5 V 65 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 55 RDS (on) 50 45 40 35 30 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 25 1.6 20 15 10 5 0 -60 -20 20 60 100 C 160 typ typ 1.2 2% 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 0 pF C A IF 10 2 Ciss 10 -1 10 1 Coss 10 -2 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) Crss 10 0 0 5 10 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 |
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